spb-64s spj-63s 10 20 50 40 30 0 1 5 50 10 20ms i fsm (a) parameter type no. absolute maximum ratings v rm (v) i f (av) (a) i fsm (a) v f (v) i f (a) i f / i rp (ma) rth ( j-c) i r (ma) i r (h) (ma) t rr (ns) tj ( c) tstg ( c) electrical characteristics (ta = 25 c) ( c/ w) (g) mass remarks center-tap center-tap 1 chip 1 chip others spb-64s 6.0 40 30 60 3.0 5.0 50 60 100 60 0.55 0.7 0.6 3.0 3.5 5.0 0.75 50 50 50 100/100 0.45 3.0 30 (tj = 125 c) ?0 to +150 5.0 5.0 0.29 1.04 0.29 spb-g34s spb-g54s 6.0 15.0 5.0 7.5 5.0 3.0 50 100/100 50 (tj = 150 c) 2.5 spb-g56s a a b 10 20 50 40 30 0 1 5 50 10 20ms i fsm (a) 10 20 50 40 30 0 1 5 50 10 20ms i fsm (a) spb-g34s 30 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 100 10 1 0.1 0.01 0.001 010 30 5060 20 40 spj-63s 6.0 mpe-24h 80 70 90 100 110 120 130 0 1.0 2.0 3.0 4.0 5.0 6.0 v r =40v 100 95 105 110 115 120 125 0 1.0 0.5 2.0 1.5 2.5 3.0 v r =40v d.c. t /t 1/6 = t /t 1/ 3 = t /t 1/2 = sinewave d.c. t /t 1/6 = t /t 1/ 3 = t /t 1/2 = t a 125? = 60? 100? 27? 100? t a 125? = 60? 27? 30 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 t a 125? = 60? 100? 28? 100 10 1 0.1 0.01 0.005 010 30 5060 20 40 100? t a 125? = 60? 28? 6.5 0.4 2.3 0.4 5.4 4.9 4.1 5.4 0.4 1.7 0.5 5.5 0.4 2.5 0.4 0.8 0.1 0.8 1.5 max 0.1 0.55 0.1 0.55 0.1 1.15 12 3 0.1 1.2max 2.29 0.5 2.29 0.5 0 to 0.25 0.5 0.2 2.9 0.16 1.37 5.0 0.7 v r =v rm , ta=100 c max per element v r = v rm max per element 86 1.2 1.27 10.2 0.86 0.76 2.54 2.54 4.44 1.3 2.59 0.4 3.19 1.3 8.5 10.0 11.3 11.0 1.4 schottky barrier diodes (power surface mount) 30v, 40v, 60v 50hz half-cycle sinewave single shot max per element fig. forward voltage v f (v) forward current i f (a) v f ? f characteristics (typical) overcurrent cycles i fms rating peak forward surge current i fsm (a) overcurrent cycles i fms rating peak forward surge current i fsm (a) reverse voltage v r (v) reverse current i r (ma) v r ? r characteristics (typical) case temperature tc ( c) average forward current i f (av) (a) tc i f(av) derating forward voltage v f (v) forward current i f (a) v f ? f characteristics (typical) overcurrent cycles i fms rating peak forward surge current i fsm (a) reverse voltage v r (v) reverse current i r (ma) v r ? r characteristics (typical) case temperature tc ( c) average forward current i f (av) (a) tc i f(av) derating sinewave external dimensions (unit: mm) flammability: ul94v-0 or equivalent a fig. b fig. type no. polarity lot no. 13 2 (common to backside of case) n.c 1 chip anode cathode anode center-tap anode cathode (common) a a
10 20 50 40 30 60 0 1 5 50 10 20ms i fsm (a) spb-g54s spb-g56s 10 20 30 50 40 60 0 1 5 50 10 20ms i fsm (a) 0 0.2 0.4 0.6 1.0 0.8 20 10 1 0.1 0.01 0.001 80 70 90 100 110 120 130 0 1.0 2.0 3.0 4.0 5.0 v r =40v 30 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 d.c. t /t 1/6 = t /t 1/ 3 = t /t 1/2 = sinewave t a 125? = 60? 100? 28? 500 100 10 1 0.1 0.01 0.005 010 30 5060 20 40 100? t a 125? = 60? 28? mpe-24h 80 70 90 100 110 120 130 0 2.0 1.0 3.0 4.0 6.0 5.0 v r =60v d.c. t /t 1/6 = t /t 1/ 3 = t /t 1/2 = t a 125? = 60? 100? 23? 0 2030 506070 10 40 100? t a 125? = 60? 23? 50 10 1 0.1 0.01 0.001 87 100 110 120 130 140 150 0 5 10 15 t /t 5/6 = t /t 1/2 = d.c. t /t 1/ 3 = t t 20 40 100 80 60 0 1 5 50 10 20ms i fsm (a) forward voltage v f (v) forward current i f (a) v f ? f characteristics (typical) overcurrent cycles i fms rating peak forward surge current i fsm (a) reverse voltage v r (v) reverse current i r (ma) v r ? r characteristics (typical) case temperature tc ( c) average forward current i f (av) (a) tc i f(av) derating forward voltage v f (v) forward current i f (a) v f ? f characteristics (typical) overcurrent cycles i fms rating i fms rating peak forward surge current i fsm (a) peak forward surge current i fsm (a) reverse voltage v r (v) reverse current i r (ma) v r ? r characteristics (typical) case temperature tc ( c) average forward current i f (av) (a) tc i f(av) derating case temperature tc ( c) average forward current i f (av) (a) tc i f(av) derating sinewave sinewave tj =150? v r =40v
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